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Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

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6 Author(s)
Trevisoli, R.D. ; Univ. of Sao Paulo, Sao Paulo, Brazil ; Doria, R.T. ; de Souza, M. ; Das, S.
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This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short-channel devices down to 30 nm at different temperatures have been also used to validate the model.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )