This work is concerned with the design criteria and the experimental characterization of front-end electronics in a 65-nm CMOS technology for the readout of hybrid pixels and of monolithic active pixel sensors using a deep N-well as their collecting electrode. The work presents a summary of the experimental results relevant to a prototype chip, named Apsel65, focusing particularly on the front-end processor features and performance.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:59
,
Issue:
6
)
Date of Publication: Dec. 2012