Referenced Items are not available for this document.
Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power consumption. This is because the heat generated by the drain current is spread to the area larger than the NW channel. Dependences of temperature rise on other parameters such as gate oxide or buried oxide thickness suggest that heat dissipates mainly via source/drain or substrate not via the gate electrode.
Published in:
Electron Devices, IEEE Transactions on
(Volume:59
,
Issue:
12
)
Date of Publication: Dec. 2012
- Page(s):
- 3239 - 3242
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 13136079
- Digital Object Identifier :
- 10.1109/TED.2012.2218110
- Product Type:
- Journals & Magazines
- Date of Publication :
- 11 October 2012
- Date of Current Version :
- 16 November 2012
- Issue Date :
- Dec. 2012
- Sponsored by :
- IEEE Electron Devices Society
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