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Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling

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3 Author(s)
Christophe Dalle ; Institut d'Electronique de Microélectonique et de Nanotechnologie, Cité Scientifique, Avenue Poincaré, BP 60069, Villeneuve d'Ascq Cédex, France ; Fran├žois Dessenne ; Jean-Luc Thobel

The potential of N+NN+ GaN transferred-electron devices of mesa type operating in the accumulation layer transit-time mode at 1 THz is investigated by means of 1-D time-domain energy/momentum numerical modeling. GaN transport parameters are specified. The device structure has been optimized. The RF operating mode is analyzed. The RF emitted performance demonstrates that such a diode is a potential candidate for the realization of continuous-wave cooled or pulsed low-power sources at 1 THz. Moreover, because of both electronic and thermal limitations, the maximum achievable operating frequency is close to 1 THz.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 12 )