IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:59 Issue:12 Help

Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dalle, C. ; Inst. d''Electron. de Microelectonique et de Nanotechnol., Villeneuve d''Ascq, France ; Dessenne, F. ; Thobel, J.-L.

The potential of N+NN+ GaN transferred-electron devices of mesa type operating in the accumulation layer transit-time mode at 1 THz is investigated by means of 1-D time-domain energy/momentum numerical modeling. GaN transport parameters are specified. The device structure has been optimized. The RF operating mode is analyzed. The RF emitted performance demonstrates that such a diode is a potential candidate for the realization of continuous-wave cooled or pulsed low-power sources at 1 THz. Moreover, because of both electronic and thermal limitations, the maximum achievable operating frequency is close to 1 THz.

Published in:
Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )

Date of Publication: Dec. 2012

Page(s):
3321 - 3326
ISSN :
0018-9383
INSPEC Accession Number:
13136078
Digital Object Identifier :
10.1109/TED.2012.2218111
Product Type:
Journals & Magazines
Date of Publication :
11 October 2012
Date of Current Version :
16 November 2012
Issue Date :
Dec. 2012
Sponsored by :
IEEE Electron Devices Society

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.