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Piezoresistive Sensing Performance of Junctionless Nanowire FET

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5 Author(s)
Singh, P. ; Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore ; Jianmin Miao ; Pott, V. ; Woo-Tae Park
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This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.

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Electron Device Letters, IEEE  (Volume:33 ,  Issue: 12 )