Referenced Items are not available for this document.
Reduction in Specific Contact Resistivity to 
Ge Using 
Interfacial Layer
Reduction in Specific Contact Resistivity to
We report a metal-insulator-semiconductor (MIS) contact using a TiO2 interfacial layer on highly doped n+ Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height. A specific contact resistivity of 1.3 × 10-6 Ω·cm2 was achieved, which represents a 70× reduction from conventional contacts. For the first time, interfacial layer conductivity is experimentally identified as an important consideration for high-performance MIS contacts. New insights on the mechanism responsible for contact resistance reduction are presented.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
11
)
Date of Publication: Nov. 2012
- Page(s):
- 1541 - 1543
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13064070
- Digital Object Identifier :
- 10.1109/LED.2012.2214758
- Product Type:
- Journals & Magazines
- Date of Publication :
- 11 October 2012
- Date of Current Version :
- 19 October 2012
- Issue Date :
- Nov. 2012
- Sponsored by :
- IEEE Electron Devices Society
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