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Reduction in Specific Contact Resistivity to  \hbox {n}^{+} Ge Using \hbox {TiO}_{2} Interfacial Layer

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3 Author(s)
Lin, J.-Y.J. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Roy, A.M. ; Saraswat, K.C.

We report a metal-insulator-semiconductor (MIS) contact using a TiO2 interfacial layer on highly doped n+ Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height. A specific contact resistivity of 1.3 × 10-6 Ω·cm2 was achieved, which represents a 70× reduction from conventional contacts. For the first time, interfacial layer conductivity is experimentally identified as an important consideration for high-performance MIS contacts. New insights on the mechanism responsible for contact resistance reduction are presented.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )