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4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 ^{\circ}\hbox {C}

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6 Author(s)
Wei-Cheng Lien ; Appl. Sci. & Technol. Program, Univ. of California, Berkeley, CA, USA ; Dung-Sheng Tsai ; Der-Hsien Lien ; Senesky, D.G.
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This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrentto-dark-current ratio of the SiC MSM PDs is as high as 1.3 × 105 at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594 μs/684 μs to 684 μs/786 μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )