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Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon

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5 Author(s)
Köstner, S. ; Max Planck Inst. of Microstructure Phys., Halle, Germany ; Hähnel, A. ; Mokso, R. ; Blumtritt, H.
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During crystallization of multicrystalline silicon, carbon-rich liquid-solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si-C-N filaments. We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. A detailed transmission electron microscopy analysis and a quantitative electron energy loss spectroscopy analysis are presented, based on tomography-assisted target preparation.

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Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 1 )