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Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon

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5 Author(s)
Stefan Köstner ; Max Planck Institute of Microstructure Physics, Germany ; Angelika Hähnel ; Rajmund Mokso ; Horst Blumtritt
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During crystallization of multicrystalline silicon, carbon-rich liquid-solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si-C-N filaments. We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. A detailed transmission electron microscopy analysis and a quantitative electron energy loss spectroscopy analysis are presented, based on tomography-assisted target preparation.

Published in:

IEEE Journal of Photovoltaics  (Volume:3 ,  Issue: 1 )