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Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

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5 Author(s)
Zhang, Z. ; Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA ; Hurni, C.A. ; Arehart, A.R. ; Speck, J.S.
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Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH3-MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at EC - 0.14 eV, EC - 0.21 eV, EC - 0.26 eV, EC - 0.62 eV, EC - 0.67 eV, EC - 2.65 eV, and EC - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at EC - 0.14 eV and EC - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at EC - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of EC - 2.65 eV and EC - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH3-MBE grown m-plane GaN.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 15 )

Date of Publication:

Oct 2012

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