By Topic

High-power single-chip InGaN blue light-emitting diode with 3.3 W output power

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jeong, T. ; Korea Photonics Technol. Inst., Gwangju, South Korea ; Baek, J.H. ; Ha, J.-S. ; Ryu, H.Y.

The characteristics of a high-power single-chip blue light-emitting diode (LED) operating with >;10 W input power are reported. The LED chip was fabricated in the form of a vertical-injection structure with chip dimensions of 1.8 × 1.8 mm. Electrode patterns at the n-GaN surface were designed to optimise the output power and operation voltage. Electrical and optical characteristics of the LED were measured up to 3 A injection current under pulsed operation condition. Output power and forward voltage at 3 A were obtained to be 3.3 W and 3.67 V, respectively, which demonstrates the wall-plug efficiency of >;30% with 10 W input power. Even higher output power and efficiency are expected from the single-chip LED by reducing the efficiency droop of InGaN-based LEDs.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 21 )