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Dynamic behavior of selected SiC and Qspeed™ diodes and their comparisons in various practical applications

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4 Author(s)
Spanik, P. ; Dept. of Mechatron. & Electron., Univ. of Zilina, Zilina, Slovakia ; Frivaldsky, M. ; Radvan, R. ; Valco, M.

This paper deals with investigation of dynamic behavior of perspective power diode structures. Main scope is research of impact of diode's dynamics on the efficiency of switched mode power supply suited for dedicated application. In principle, the investigation of dynamic behavior was made in order to find out dependence of diode losses on the switching frequency and supply voltage. Quantification of received data was based on experimental measurements and consequently was converted into continuous form for graphic interpretation. We have focused on diode structures which today present most innovative solution for high frequency applications. It deals about comparisons of standard Si schottky diode MBR20200CT, SiC diodes SDT10S30, SDT12S60, C4D15120 and highest performance Si diodes - QSpeed products QH12TZ600, LQA12P300. As a merit of performance, each diode has been utilized in proposed converters - LLC converter and PFC converter, whereby efficiency of each converter has been investigated and plotted in the dependency of utilized rectifier.

Published in:

Applied Electronics (AE), 2012 International Conference on

Date of Conference:

5-7 Sept. 2012