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High-Throughput Screening of Amorphous \hbox {Y}_{2} \hbox {O}_{3} \hbox {TiO}_{2}\hbox {/}\hbox {SiO}_{2} Higher \kappa Gate Dielectric Layers

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5 Author(s)
Kao-Shuo Chang ; Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Green, M.L. ; Schenck, P.K. ; Levin, I.
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In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3-TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500°C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (<; 10-5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )

Date of Publication:

Dec. 2012

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