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Enhanced carrier transport by defect passivation in Si/SiO2 nanostructure-based solar cells

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6 Author(s)
Watanabe, Keiji ; Central Research Laboratory, Hitachi, Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan ; Tsuchiya, Ryuta ; Mine, T. ; Yonamoto, Yoshiki
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We investigate the relationship between the defect states and the carrier transport property of Si nanostructure-based solar cells. The solar cell consists of a Schottky junction including Si/SiO2 multiple quantum wells. The carrier transport is significantly enhanced by forming gas annealing of Si/SiO2 multiple quantum wells, which is well correlated with the decrease in the Pb and E′ center densities evaluated by electron spin resonance. In particular, we find that high temperature (>600 °C) annealing is necessary to passivate E′ center. Our results demonstrate the significance of defect passivation for the realization of high efficiency Si nanostructure-based solar cells.

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Applied Physics Letters  (Volume:101 ,  Issue: 15 )