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Growth and Scintillation Properties of Pr Doped ({\hbox {Gd}},{\hbox {Y}})_{3}({\hbox {Ga}},{\hbox {Al}})_{5} {\hbox {O}}_{12} Single Crystals

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9 Author(s)
Kamada, K. ; Mater. Res. Lab., Furukawa Co., Ltd., Tsukuba, Japan ; Yanagida, T. ; Pejchal, J. ; Nikl, M.
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Pr: (Gd,Y)3(Ga,Al)5 O12 single crystals were grown by the μ-PD method with RF heating system. Pr3+ 5d-4f emission within 300-350 nm, Pr3+ 4f-4f emission within 480-650 nm and Gd3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y)3(Ga,Al)5 O12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation ( 137Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd1 Y2Ga3Al2 O12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 5 )

Date of Publication:

Oct. 2012

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