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Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness

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4 Author(s)
Goharrizi, A.Y. ; Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran ; Pourfath, M. ; Fathipour, M. ; Kosina, H.

The electrical characteristics of armchair edge graphene nanoribbon field-effect transistors in the presence of line-edge roughness scattering are studied. Self-consistent atomistic simulations based on the nonequilibrium Green's function formalism are employed. A tight binding model incorporating the third nearest neighbor interaction and edge bond relaxation is used to describe the electronic bandstructure. The effect of geometrical and roughness parameters on the on-current, the off -current, subthreshold swing, and the transconductance is investigated.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )