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Influence of Edge Defects, Vacancies, and Potential Fluctuations on Transport Properties of Extremely Scaled Graphene Nanoribbons

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5 Author(s)
Poljak, M. ; Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA ; Song, E.B. ; Minsheng Wang ; Suligoj, T.
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Atomistic quantum transport simulations of a large ensemble of devices are employed to investigate the impact of different sources of disorder on the transport properties of extremely scaled (length of 10 nm and width of 1-4 nm) graphene nanoribbons. We report the dependence of the transport gap, on- and off-state conductances, and on-off ratio on edge-defect density, vacancy density, and potential fluctuation amplitude. For the smallest devices and realistic lattice defect densities, the transport gap increases by up to ~300%, and the on-off ratio reaches almost ~106 . We also report a rather high variation of the transport gap and on-off ratio. In contrast, we find that the potential fluctuations have a negligible impact on the transport gap and cause a relatively modest increase of the on-off ratio.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )