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Infrared (IR) Absorber Based on Multiresonant Structure

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2 Author(s)
Jaradat, H. ; Electr. & Comput. Eng. Dept., Univ. of Massachusetts, Lowell, MA, USA ; Akyurtlu, A.

In this letter, an absorber design is introduced that has a very wide absorption band at normal incidence over the midrange infrared (IR) wavelength regime. The proposed structure is comprises four layers, where the extra layer adds a degree of freedom in optimizing the response compared the conventional three-layered absorbers (dielectric spacer sandwiched between a ground thin film and a resonant conducting pattern). The simulations revealed a broadband absorption region that extends from 3 up to 12 μm of light wavelength achieving more than 120% of full bandwidth at half-maximum (FWHM).

Published in:

Antennas and Wireless Propagation Letters, IEEE  (Volume:11 )