By Topic

Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Dutt, B. ; APIC Corp., Culver City, CA, USA ; Sukhdeo, D.S. ; Nam, D. ; Vulovic, B.M.
more authors

We provide a theoretical analysis of the relative merits of tensile strain and n-type doping as approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain offers threshold reductions of over 200x, and significant improvements in slope efficiency compared with the recently demonstrated 0.25% strained electrically pumped germanium laser. In contrast, doping offers fundamentally limited benefits, and too much doping is harmful. Moreover, we predict that tensile strain reduces the optimal doping value and that experimentally demonstrated doping has already reached its fundamental limit. We therefore theoretically show large (>; 1%) tensile strain to be the most viable path to a practical germanium-on-silicon laser.

Published in:

Photonics Journal, IEEE  (Volume:4 ,  Issue: 5 )