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Electron transport properties of carbon nanotube–graphene contacts

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3 Author(s)
Cook, Brandon G. ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA ; French, William R. ; Varga, Kalman

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The properties of carbon nanotube-graphene junctions are investigated with first-principles electronic structure and electron transport calculations. Contact properties are found to be key factors in determining the performance of nanotube based electronic devices. In a typical single-walled carbon nanotube-metal junction, there is a p-type Schottky barrier of up to ∼0.4 eV which depends on the nanotube diameter. Calculations of the Schottky barrier height in carbon nanotube-graphene contacts indicate that low barriers of 0.09 eV and 0.04 eV are present in nanotube-graphene contacts ((8,0) and (10,0) nanotubes, respectively). Junctions with a finite contact region are investigated with simulations of the current-voltage characteristics. The results suggest the suitability of the junctions for applications and provide insight to explain recent experimental findings.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 15 )