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This paper focuses on our latest progress in n-i-p thin-micromorph solar-cell fabrication using textured back reflectors and asymmetric intermediate reflectors, both deposited by low-pressure chemical vapor deposition of zinc oxide. We then present microcrystalline bottom cells with high crystallinity, which yield excellent long wavelength response for relatively thin absorber thickness. In a 1.5-μm-thick μc-Si:H single-junction n-i-p solar cell, we thus obtain a short-circuit current density of 25.9 mA·cm-2, resulting in an initial cell efficiency of 9.1%. Subsequently, the roughness of the intermediate reflector layer is adapted for the growth of high-performance amorphous silicon (a-Si:H) top cells. Combining bottom cells with high current, an optimal intermediate reflector morphology and a 0.22-μm-thick a-Si:H top cell, we reach high initial open-circuit voltages of 1.45 V, and we obtain a stabilized cell with an efficiency of 11.1%, which is our best stable efficiency for n-i-p solar cells.
Date of Publication: Jan. 2013