Referenced Items are not available for this document.
Fabrication of a deep field stop layer is the key to backside process of IGBT. The shallow-implanted P-dopant was far deeply activated by Pulse-cw hybrid laser annealing. The approach leads to the low-cost process without MeV-class implantation.
Published in:
Lasers and Electro-Optics (CLEO), 2012 Conference on
Date of Conference: 6-11 May 2012
- Page(s):
- 1 - 2
- Print ISBN:
- 978-1-4673-1839-6
- INSPEC Accession Number:
- 13060609
- Conference Location :
- San Jose, CA
- Product Type:
- Conference Publications
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