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Fabrication of a deep field stop layer is the key to backside process of IGBT. The shallow-implanted P-dopant was far deeply activated by Pulse-cw hybrid laser annealing. The approach leads to the low-cost process without MeV-class implantation.
Lasers and Electro-Optics (CLEO), 2012 Conference on
Date of Conference: 6-11 May 2012