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On-chip metal wire grid polarizer for CMOS image sensor based on 65-nm technology

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7 Author(s)
Sasagawa, K. ; Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan ; Ando, K. ; Matsuoka, H. ; Kobayashi, T.
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We demonstrate complementary metal-oxide-semiconductor (CMOS) image sensor pixels with on-chip polarizer fabricated by a standard 65-nm CMOS technology. The extinction ratio of 94 at a wavelength of 750 nm was achieved.

Published in:

Lasers and Electro-Optics (CLEO), 2012 Conference on

Date of Conference:

6-11 May 2012