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Browse Journals & Magazines > Applied Physics Letters ...> Volume:101 Issue:14 Help

The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition

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3 Author(s)
Li, Jiun-Yun ; Department of Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, USA ; Huang, Chiao-Ti ; Sturm, James C.

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The surface segregation of phosphorus in relaxed Si0.7Ge0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

Published in:
Applied Physics Letters  (Volume:101 ,  Issue: 14 )

Date of Publication: Oct 2012

Page(s):
142112 - 142112-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.4757123
Product Type:
Journals & Magazines
Date of Current Version :
08 October 2012
Issue Date :
Oct 2012

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