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This study proposes a numerical technique for the optimisation of the deposited layer thickness in electrochemical cells using the insulating shields. The aim is to develop a systematic adjustment of the insulating shield position in order to obtain a more uniform distribution of the deposited layer at the cathode. The optimal position of the insulating shield is managed by a genetic algorithm. Both the layer thickness profile and the position of the insulating shield are calculated by using the level set method. The main advantage of this technique is that during the whole computational process, the same triangular finite-element mesh with a fixed connectivity is used. An example related to the optimisation of the layer thickness distribution in the vicinity of a singularity (incident angle between the electrode and insulator=180=), using an insulating shield is presented.