Referenced Items are not available for this document.
Si/SiGe and AlGaAs/GaAs resonant tunneling diodes (RTDs) are realized using a self-aligned fabrication process with dimensions ranging from 50 μm down to 30 nm. Using these devices, scaling rules are developed and incorporated into a modified SPICE model. The depletion width and the sidewall current are extracted from the model. The results confirm that the parasitic sidewall current is responsible for the reduction in peak-to-valley current ratio (PVCR) in small-diameter RTDs. A new device layout is demonstrated to significantly reduce the sidewall current for optimum nanoscale performance. Improvements in the PVCRs are demonstrated by this approach.
Published in:
Electron Devices, IEEE Transactions on
(Volume:59
,
Issue:
12
)
Date of Publication: Dec. 2012
- Page(s):
- 3555 - 3560
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 13136065
- Digital Object Identifier :
- 10.1109/TED.2012.2219867
- Product Type:
- Journals & Magazines
- Date of Publication :
- 05 October 2012
- Date of Current Version :
- 16 November 2012
- Issue Date :
- Dec. 2012
- Sponsored by :
- IEEE Electron Devices Society
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