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Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system.
Terahertz Science and Technology, IEEE Transactions on (Volume:2 , Issue: 6 )
Date of Publication: Nov. 2012