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Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 \mu{\hbox {m}} Pulse Excitation

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3 Author(s)
Ioannis Kostakis ; School of Electrical and Electronic Engineering, University of Manchester, Manchester, U.K. ; Daryoosh Saeedkia ; Mohamed Missous

Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system.

Published in:

IEEE Transactions on Terahertz Science and Technology  (Volume:2 ,  Issue: 6 )