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Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 \mu{\hbox {m}} Pulse Excitation

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3 Author(s)
Kostakis, I. ; Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK ; Saeedkia, D. ; Missous, M.

Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system.

Published in:

Terahertz Science and Technology, IEEE Transactions on  (Volume:2 ,  Issue: 6 )

Date of Publication:

Nov. 2012

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