By Topic

Nondestructive Defect Characterization of Saw-Damage-Etched Multicrystalline Silicon Wafers Using Scanning Electron Acoustic Microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Lei Meng ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Rao, S.S.P. ; Bhatia, Charanjit S. ; Steen, S.E.
more authors

Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 1 )