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Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs

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6 Author(s)
Schmid, M. ; Inst. fur Halbleitertech. (IHT), Univ. of Stuttgart, Stuttgart, Germany ; Oehme, M. ; Gollhofer, M. ; Kasche, M.
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The strain of MBE grown Ge-on-Si p-i-n diodes is engineered between zero and 0.24% tensile strain. From electroluminescence peak positions the direct bandgap energies are determined to vary between 0.801 eV and 0.782 eV respectively.

Published in:

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Date of Conference:

29-31 Aug. 2012

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