By Topic

Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Schmid, M. ; Inst. fur Halbleitertech. (IHT), Univ. of Stuttgart, Stuttgart, Germany ; Oehme, M. ; Gollhofer, M. ; Kasche, M.
more authors

The strain of MBE grown Ge-on-Si p-i-n diodes is engineered between zero and 0.24% tensile strain. From electroluminescence peak positions the direct bandgap energies are determined to vary between 0.801 eV and 0.782 eV respectively.

Published in:

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Date of Conference:

29-31 Aug. 2012