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Numerical analysis of strained SiGe-based carrier-injection optical modulators

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3 Author(s)
Younghyun Kim ; Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan ; Takenaka, M. ; Takagi, S.

Strain effect on SiGe-based carrier-injection optical modulators is numerically investigated. Owing to enhancement in free-carrier absorption of strained SiGe, SiGe-based pin-junction optical modulator is predicted to exhibit the 4.7× enhancement of free-carrier absorption against Si.

Published in:

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Date of Conference:

29-31 Aug. 2012

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