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1.55 µm electroluminescence from strained n-Ge quantum wells on silicon substrates

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6 Author(s)
Gallacher, K. ; Sch. of Eng., Univ. of Glasgow, Glasgow, UK ; Velha, P. ; Paul, D.J. ; Frigerio, J.
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Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively.

Published in:

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Date of Conference:

29-31 Aug. 2012