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Electrical and radiation characterization of three SOI material technologies

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4 Author(s)
Wade A. Krull ; Harris Semicond., Melbourne, FL, USA ; James F. Buller ; George V. Rouse ; Richard D. Cherne

Many silicon-on-insulator (SOI) material technologies are currently under development. Each of these technologies possesses certain electrical or physical characteristics that affect the potential applications of the technology. This paper will describe a characterization study of three SOI material approaches in development at Harris Semiconductor: SIMOX, scaled dielectric isolation, and wafer bonding. The current status of material quality will be reviewed, typical CMOS electrical- and radiation-response characteristics will be presented, and the viability of the three technologies will be assessed.

Published in:

IEEE Circuits and Devices Magazine  (Volume:3 ,  Issue: 4 )