Skip to Main Content
Many silicon-on-insulator (SOI) material technologies are currently under development. Each of these technologies possesses certain electrical or physical characteristics that affect the potential applications of the technology. This paper will describe a characterization study of three SOI material approaches in development at Harris Semiconductor: SIMOX, scaled dielectric isolation, and wafer bonding. The current status of material quality will be reviewed, typical CMOS electrical- and radiation-response characteristics will be presented, and the viability of the three technologies will be assessed.