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A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of \pm 0.15  ^{\circ} C (3 \sigma ) From - 55 ^{\circ} C to 125 ^{\circ} C

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3 Author(s)
Souri, K. ; DIMES, TU-Delft, Delft, Netherlands ; Youngcheol Chae ; Makinwa, K.A.A.

This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy- efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C (3σ) from -55°C to 125°C . Over the same range, devices from a second lot achieved an inaccuracy of ±0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 1 )

Date of Publication:

Jan. 2013

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