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Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

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4 Author(s)
Ning Cui ; Tsinghua Univ., Beijing, China ; Renrong Liang ; Jing Wang ; Jun Xu

In this paper, we present an analytical model of silicon-based hetero-material-gate (HMG) tunnel field effect transistor (TFET). This model includes the calculation of electric potential, electric field and band-to-band tunneling rate. Electrical characteristics of the HMG TFET can be accurately described by this model. The electrical behavior of the HMG TFET obtained by the analytical model is compared with the numerical simulation results, and shows excellent agreement. It is demonstrated that the HMG TFET has superior electrical performance than single-material-gate TFET.

Published in:

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Date of Conference:

20-23 Aug. 2012

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