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Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift

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8 Author(s)
Takashino, H. ; Renesas Electron. Corp., Itami, Japan ; Tanizawa, M. ; Okagaki, T. ; Hayashi, T.
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In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by stress, ranging from a high tensile one to a high compressive one. Using this model, the quantum confinement effect, combined with large out-of-plane stress, is shown to play an important role to cause the threshold voltage shift as large as about 80 mV induced by high-film-stress contact etch-stop layer.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )