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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- \mu\hbox {m} AlGaN/GaN HEMTs

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3 Author(s)
Silvestri, M. ; H.H. Wills Phys. Lab., Univ. of Bristol, Bristol, UK ; Uren, M.J. ; Kuball, M.

Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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