By Topic

Low-power and robust SRAM cells based on asymmetric FinFET structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ebrahimi, B. ; Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran, Iran ; Asadpour, R. ; Afzali-Kusha, A.

In this paper, we investigate the characteristics of low-power and robust SRAM cells based on asymmetric FinFET structures in a 32 nm technology. They are based on asymmetric source and drain structures and include Asymmetric Drain Spacer Extension (ADSE) and Asymmetric Doped Drain (ADD) FinFETs. The study includes two recently introduced 6-T SRAM cells based on these structures. In addition, we propose four transistor driverless (4-TDL) and loadless (4-TLL) SRAM cells based on these asymmetric structures. In the investigation, which compares the structures, the effect of different channel orientations is also considered. The results indicate that for 6-T, 4-TDL, and 4-TLL with different channel orientations asymmetric structures have higher read stabilities than the symmetric ones. In addition, the channel orientation (100) presents a higher read stability for 4-TLL while the channel orientation (110) gives rise to a better read stability for 6-T and 4-TDL. Asymmetric structures, however, have lower read currents where the ADSE structure leads to the least one. In terms of write operation, the asymmetric structures present better stability where 4-T cells outperform the 6-T cell. Finally, the results on static power shows that the ADD FinFET structure provides the lowest static power values due to a better DIBL control.

Published in:

Quality Electronic Design (ASQED), 2012 4th Asia Symposium on

Date of Conference:

10-11 July 2012