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Maximization of SRAM energy efficiency utilizing MTCMOS technology

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3 Author(s)
Bo Wang ; VIRTUS, Nanyang Technol. Univ., Singapore, Singapore ; Jun Zhou ; Kim, T.T.

Higher-Vth devices in the cross-coupled latches and the write access transistors, and lower-Vth devices in the read ports are preferred for reducing leakage current without sacrificing performance. However, at ultra-low supply voltage levels, higher-Vth devices can retard or nullify energy efficiency due to substantially slower write speed than read. This paper presents energy efficiency maximization techniques for 8T SRAMs utilizing multi-threshold CMOS (MTCMOS) technology and various design techniques. Simulation results using a commercial 65 nm technology show that the SRAM energy efficiency can improved up to 33× through MTCMOS and prior power reduction and performance boosting techniques.

Published in:

Quality Electronic Design (ASQED), 2012 4th Asia Symposium on

Date of Conference:

10-11 July 2012