By Topic

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Xie, F. ; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China ; Lu, H. ; Chen, D. ; Ren, F.
more authors

We demonstrate a dual-operation-mode ultraviolet (UV) Schottky-barrier photodetector (PD) fabricated on high-resistivity GaN homoepitaxial layer with low defect density. The undoped GaN active layer is grown by metal-organic chemical vapor deposition on a conductive bulk GaN substrate. Under reverse and zero bias, the PD works in depletion mode with low dark current and high UV/visible rejection ratio. Under forward bias, the PD works alternatively in photoconductive mode, which exhibits high photo-responsivity and an attractive narrow detection band around 365 nm. In addition, the PD also shows reasonable response speed in both operation modes.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 24 )