Referenced Items are not available for this document.
In-Plane-Gate Transparent 
Nanowire Transistors
In-Plane-Gate Transparent
In-plane-gate transparent SnO2 nanowire transistors gated by SnO2-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm2 at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade, >; 105, and 106.8 cm2/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
11
)
Date of Publication: Nov. 2012
- Page(s):
- 1625 - 1627
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13064063
- Digital Object Identifier :
- 10.1109/LED.2012.2214372
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 October 2012
- Date of Current Version :
- 19 October 2012
- Issue Date :
- Nov. 2012
- Sponsored by :
- IEEE Electron Devices Society
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