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In-plane-gate transparent SnO2 nanowire transistors gated by SnO2-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm2 at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade, >; 105, and 106.8 cm2/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors.
Date of Publication: Nov. 2012