Scheduled Maintenance on April 29th, 2016:
IEEE Xplore will be unavailable for approximately 1 hour starting at 11:30 AM EDT. We apologize for the inconvenience.
By Topic

In-Plane-Gate Transparent \hbox {SnO}_{2} Nanowire Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Huixuan Liu ; Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University , Changsha, China ; Qing Wan

In-plane-gate transparent SnO2 nanowire transistors gated by SnO2-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm2 at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade, >; 105, and 106.8 cm2/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 11 )