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In-Plane-Gate Transparent \hbox {SnO}_{2} Nanowire Transistors

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2 Author(s)
Huixuan Liu ; Key Lab. for Micro-Nano Optoelectron. Devices of Minist. of Educ., Hunan Univ., Changsha, China ; Qing Wan

In-plane-gate transparent SnO2 nanowire transistors gated by SnO2-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm2 at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade, >; 105, and 106.8 cm2/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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