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This paper presents design and simulation of an improved CMOS-MEMS electrostatic torsional micro-mirror for rotational scanning. The inclusion of substrate single crystal silicon (SCS) in vertical comb drives (VCDs) allows for large electrostatic force and scanning angle. The uniqueness of the VCDs also includes elevation tenability of the electrodes. The device design and simulation for improvements are based on AMI 0.5 μm CMOS technology with which the previous devices were fabricated. With typical technological parameters included in simulation, a maximum scanning angle of ±10° can be obtained at a 27 V driving voltage.