Skip to Main Content
We present the radiation effect models for solar cells used in NanoTCAD device simulator and provide comparison with experimentally measured on solar cell performance. The device modeled is a p+ n GaAs solar cell. Dark, Light IV curves and corresponding performance parameters are simulated and compared with experimental results for 2 MeV protons at varying fluence. Majority carrier defect introduction rates for n-type GaAs used in the NanoTCAD simulations were taken from deep level transient spectroscopy (DLTS) data provided by the Naval Research Lab (NRL). Results show a good match between simulations and experimental results.