By Topic

Low-cost Cu2ZnSnS4 thin films for large-area high-efficiency heterojunction solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Das, S. ; Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA ; Mandal, K.C.

Cu2ZnSnS4 (CZTS) thin films have been deposited on soda-lime glass (SLG) and Mo-coated SLG substrates using a low-cost spray pyrolysis technique followed by sulfurization under H2S flow at 540°C. Aqueous solution containing CuCl, ZnCl2, SnCl4 and thiourea was used as precursor. Spray deposition was carried out at three different substrate temperatures of 280°C, 360°C and 440°C. Deposition conditions were optimized to obtain the best film properties. Structural, morphological and compositional analysis of the as-deposited and sulfurized CZTS films were carried out by x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive x-ray spectroscopy (EDX) and x-ray photoelectron spectroscopy (XPS). Optical and electrical properties were measured by UV-Vis spectroscopy, van der Pauw and Hall effect measurements. XRD spectra confirmed the formation of kesterite CZTS films. Grown CZTS films showed an absorption coefficient >;104 cm-1 and the bandgaps were found to lie between 1.42-1.72 eV at room temperature depending on deposition conditions and post deposition sulfurization treatments. All films were found to be of p-type conductivity with an average carrier concentration in the order of 1018-1020 cm-3. Optimum quality films were obtained for films fabricated at 360°C and no secondary phases were observed. n-CdS window layer was deposited on p-CZTS films prepared at 360°C substrate temperature to fabricate p-CZTS/n-CdS heterojunction solar cells. The heterojunction exhibited an open-circuit voltage (VOC) of 290 mV and a short-circuit current density (JSC) of 3.1 mA/cm2 under AM 1.5 illumination. Details of CZTS thin film fabrication, processing, and characterization results are presented.

Published in:

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Date of Conference:

3-8 June 2012