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Experimental and theoretical verification of the presence of inversion region in a-Si/c-Si heterojunction solar cells with an intrinsic layer

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3 Author(s)
Kunal Ghosh ; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, USA ; Clarence Tracy ; Stuart Bowden

Photovoltaic devices based on amorphous silicon (a-Si)/ crystalline silicon (c-Si) heterostructure exhibits excellent surface passivation with the highest open circuit voltage being reported on these devices. A plausible explanation for these devices to show low recombination is that the junction is induced in c-Si and an inversion region is present at the heterointerface. In this work, the presence of the inversion region at the heterointerface between intrinsic a-Si and c-Si is theoretically shown by a computer model developed in the commercial simulator Sentaurus and experimentally corroborated by lateral conductance measurement technique.

Published in:

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Date of Conference:

3-8 June 2012