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In this paper the effect of varying the base width on the performance of a proposed ultraviolet low cost high efficiency solar cell structure is presented. The structure is considered to be low cost for two reasons: firstly, it is etched through a low cost starting material using a commercial p+ silicon wafer. Secondly it responds to the ultraviolet part of the solar radiation spectrum simply by eliminating the top n+ layer of the structure. Thus it doesn't need expensive materials to be ultraviolet on. The structure based on the vertical generation and lateral collection of light generated carriers. Simulations for the ultraviolet structure are carried out using advanced TCAD tools. The illuminated I-V C/Cs at different base width is presented. For each base width, the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (F.F.) and conversion efficiency are calculated. In addition the quantum efficiency and spectral response at different base width are presented. The optimum base width which enhances the structure performance is selected.