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Performance testing of high-efficient, highly-capacitive c-Si modules with pulsed solar simulators requires particular carefulness in order to avoid measurement artifacts. These devices in fact usually require a steady-state solar simulator or pulse durations longer than 100 ms. The aim of this work was to validate an alternative method for the testing of highly capacitive c-Si modules using a 10-ms single pulse solar simulator. Our approach attempts to reconstruct a quasi steady-state IV curve of a highly-capacitive device during one single 10-ms flash by applying customized voltage profiles - in place of a conventional V ramp - to the terminals of the device under test. The most promising results were obtained by using V profiles which we name “dragon-back” (DB) profiles. When compared to the reference IV measurement (obtained by using a multi-flash approach), the dragon-back V profile method provides excellent results with differences in the estimation of Pmax below ±0.5% (as well as of Isc, Voc, and FF). For the testing of highly-capacitive devices the method is accurate, fast (two flashes - possibly one - required), and cost-effective.